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L102 - High Power Diode Modules

Features

  • International standard package.
  • Direct copper bonded Al2O3-ceramic with copper base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.
  • UL registered E 72873.

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Datasheet preview – L102

Datasheet Details

Part number L102
Manufacturer IXYS Corporation
File Size 81.05 KB
Description High Power Diode Modules
Datasheet download datasheet L102 Datasheet
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Full PDF Text Transcription

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MDD 312 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type 3 1 2 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V 3 2 MDD MDD MDD MDD MDD MDD 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Maximum Ratings 520 310 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 9200 9800 551000 527000 423 000 403 000 -40...+150 150 -40...
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