L356 - HiPerDynFRED Epitaxial Diode with soft recovery

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
Low cathode to tab capacitance (< 25 pF).
International standard package.
Planar passivated chips.
Very short recovery time.
Extremely low switching losses.
Low IRM-values.
Soft recovery behaviour.
Epoxy meets UL 94V-0.
Isolated and UL registered E153432.

IXYS Corporation

Datasheet Details

Part number	L356
Manufacturer	IXYS Corporation
File Size	44.77 KB
Description	HiPerDynFRED Epitaxial Diode with soft recovery
Datasheet	L356 Datasheet
Additional preview pages of the L356 datasheet.

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Full PDF Text Transcription

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DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 9-06CR A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 9 tbd 80 0.5 0.2 -55...+175 175 -55...

Published: Mar 22, 2005 |