• Part: MCD161
  • Description: High Voltage Thyristor Module
  • Manufacturer: IXYS
  • Size: 121.94 KB
Download MCD161 Datasheet PDF
IXYS
MCD161
MCD161 is High Voltage Thyristor Module manufactured by IXYS.
Features - International standard package - Direct Copper Bonded Al2O3-ceramic base plate - Planar passivated chips - Isolation voltage 3600 V~ - UL registered, E 72873 - Keyed gate/cathode twin pins Applications - Motor control - Power converter - Heat and temperature control for industrial furnaces and chemical processes - Lighting control - Contactless switches Advantages - Space and weight savings - Simple mounting - Improved temperature and power cycling - Reduced protection circuits I2dt TVJ = 45°C; VR = 0 TVJ = TVJM; VR = 0 (di/dt)cr TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; t P = 200 µs; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM di G/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; t P = 30 µs t P = 500 µs 500 1000 120 60 8 10 -40...125 125 -40...125 A/µs V/µs W W W V °C °C °C V~ V~ Nm Nm g (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS; t = 1 min IISOL < 1 m A; t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws 3000 3600 2.25-2.75 4.5-5.5 125 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions © 2005 IXYS All rights reserved 1-3 .. MCC 161 MCD 161 Characteristic Values TVJ = TVJM 40 1.36 0.8 1.6 2 2.6 150 200 0.25 10 200 150 2 typ. 150 550 235 0.155 0.078 0.225 0.113 12.7 9.6 50 m A V V mΩ V V m A m A V m A m A m A µs µs µC A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics Symbol IRRM, IDRM VT VT0 r T VGT IGT VGD IGD IL IH tgd tq QS IRM Rth JC Rth JK d S d A a Conditions VR = VRRM; IT = 300A; TVJ = 25°C For power-loss calculations only (TVJ = TVJM) VD = 6 V; VD = 6 V; TVJ TVJ TVJ TVJ = 25°C = -40°C = 25°C = -40°C VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM TVJ = 25°C; VD = 6 V; t P = 30 µs di G/dt = 0.45 A/µs; IG = 0.45 A TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM di G/dt = 0.5 A/µs;...