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MDD250 - HIgh Power Diode

Key Features

  • Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 q q q q òi2dt.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MDD250-08N1 HIgh Power Diode Modules
MDD250-12N1 HIgh Power Diode Modules
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MDD 250 High Power Diode Modules IFRMS = 2x 450 A IFAVM = 2x 290 A VRRM = 800-1600 V 3 VRSM V 900 1300 1500 1700 VRRM V 800 1200 1400 1600 Type 3 1 2 1 2 MDD 250-08N1 MDD 250-12N1 MDD 250-14N1 MDD 250-16N1 Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 100°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 450 A 290 A 11 000 11 700 9000 9600 605 000 560 000 405 000 380 000 -40...+150 150 -40...