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MDI75-12A3 - IGBT

Key Features

  • NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 90 60 120 10 ICM = 100 VCEK < VCES 370 150 -40 ...