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MEA75-12DA - Fast Recovery Epitaxial Diode (FRED) Module

Key Features

  • International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8.
  • VRRM VR = 0.8.
  • VRRM TVJ TVJ TVJ TV.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MEA75-12DA Fast Recovery Epitaxial Diode (FRED) Module
MEA95-06DA Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) Module Preliminary data VRSM V 1200 www.DataSheet4U.com VRRM V 1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA 1 3 2 MEK 75-12 DA 1 2 3 MEE 75-12 DA 1 2 3 Symbol IFRMS IFAV IFRM IFSM Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 107 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s °C °C °C W V~ V~ TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.