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MII300-12A4 - IGBT Modules

Features

  • NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits Typical Applicat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 3.3 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 3.
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