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MII400-12E4 - IGBT Module

Features

  • IGBTs T1-T2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C non repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 420 300 450 VCES 10 1700 V V A A A µs W.
  • IGBT - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits.

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IGBT Module phaseleg and chopper topolgies MII 400-12E4 MID 400-12E4 MDI 400-12E4 3 D1 1 D12 2 8 9 D2 2 T1 3 D11 1 IC25 = 420 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary T1 8 9 T2 www.DataSheet4U.com 11 10 D2 2 11 10 3 D1 1 T2 MII MID MDI Features IGBTs T1-T2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 4.
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