MKI50-06A7 Description
= 1.9 V Preliminary Data 1 2 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 72 50 ICM = 100 VCEK ≤ VCES 10 225 V V A A A.
MKI50-06A7 Key Features
- NPT IGBT technology
- low saturation voltage
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for easy parallelling
- MOS input, voltage controlled
- ultra fast free wheeling diodes
- solderable pins for PCB mounting
- package with copper base plate