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MWI75-12A5 - IGBT

Features

  • NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q q www. DataSheet4U. com TC = 25°C Advantages q q q space and weight savings reduced prote.

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Full PDF Text Transcription

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MWI 75-12 A5 IGBT Modules Sixpack IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA W1 I 10 K10 A10 B10 R10 S10 F3 K3 P3 E10 F10 A1 M10 N10 V10 W10 E 72873 Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tP = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH Maximum Ratings 1200 1200 ±20 ±30 90 60 120 10 ICM = 100 VCEK < VCES 370 150 -40 ... +150 V V V V A A A µs A W °C °C V~ V~ Nm lb.in. mm mm m/s2 g oz.
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