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P5N50 - IXTP5N50P

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99446(08/05) www. DataSheet4U. com IXTA 5N50P IXTP 5N50P IXTY 5N50P Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 4.7 620 S pF pF pF ns ns ns ns nC nC nC 1.4.

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www.DataSheet4U.com Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 20 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 4.8 10 5 20 250 10 89 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) TO-252 (IXTY) G S (TAB) 1.6 mm (0.062 in.