P5N50
P5N50 is IXTP5N50P manufactured by IXYS.
Features z z z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect
Advantages z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
© 2005 IXYS All rights reserved
DS99446(08/05)
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IXTA 5N50P IXTP 5N50P IXTY 5N50P
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 4.7 620 S p F p F p F ns ns ns ns n C n C n C 1.4 K/W
Dim. A A1 b b2 c c2 D D1 E E1 e
Symbol
Test Conditions
TO-263 (IXTA) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
72 6.3 18
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 20 Ω (External)
18 45 16 12.6
Pins: 1
- Gate 2,4
- Drain 3
- Source
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
4.3 5.0
(TO-220)
K/W
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25°C unless otherwise specified) Min. typ. Max. 5 15 1.5 400 A A V ns
L L1 L2 L3 L4 R
TO-220 (IXTP) Outline
IF = IS, VGS = 0 V, -di/dt = 100 A/μs Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-252 (IXTY) Outline
Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46...