Datasheet Summary
High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability tfi
= 600 V = 55 A = 2.0 V = 140 ns
..
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings 600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W °C °C °C °C g g
TO-247AD (IXSH)
VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md
TO-268 (D3)...