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PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 36N30P IXTA 36N30P IXTP 36N30P
VDSS ID25
RDS(on)
= = =
300 V 36 A 110 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C °C
G = Gate S = Source G S (TAB) D = Drain TAB = Drain G D S (TAB) G
D
S
(TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
36 90 36 30 1.0 10 300 -55 ... +150 150 -55 ... +150
TO-220 (IXTP)
TO-263 (IXTA)
1.6 mm (0.062 in.
TA36N30P Datasheet
