Datasheet Summary
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High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
IXTA 3N120 IXTP 3N120
VDSS 1200 V
ID25 3A
RDS(on) 4.5 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 3 12 3 20 700 5 200 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C Features z z z
TO-220 (IXTP)
D (TAB)
G DS
TO-263 (IXTA)
D (TAB)
G = Gate S = Source
D =...