VMM1500-0075P
Key Features
- Trench MOSFETs - low RDSon - optimized intrinsic reverse diode
- package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate Applications
- converters with high power density for - main and auxiliary AC drives of electric vehicles - 4 quadrant DC drives - power supplies with low input voltage, e.g. from fuel cells or solar cells Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.55 2 1.5 1.5 2480 330 940 60 170 320 200 1.2 90 0.12 1.6 0.8 mΩ 4 0.15 V mA mA µA nC nC nC ns ns ns ns V ns 0.06 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr VGS = 10 V; ID = ID80 VDS = 20 V; ID = 10 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 60 V; ID = 500 A VGS= 10 V; VDS = 30 V; ID = 250 A; RG = 1 Ω (diode) IF = 750 A; VGS = 0 V (diode) IF = 200 A; -di/dt = 1000 A/µs; VDS = 30 V IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 1-2 315 RthJC RthJS with heat transfer paste ① additional current limitation by external leads
