VMM650-01F
Key Features
- HiPerFET TM technology - low RDSon - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode - low gate charge
- thermistor for internal temperature measurement
- package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 1.5 1 1440 200 680 150 250 400 200 1.2 300 0.12 1.5 2.2 mΩ 4 1 V mA mA µA nC nC nC ns ns ns ns V ns 0.08 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr VGS = 10 V; ID = ID80 VDS = 20 V; ID = 30 mA VDS = 0.8
- VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 75 V; ID = ID80
