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VMM650-01F - Dual Power HiPerFET Module

Key Features

  • HiPerFET TM technology.
  • low RDSon.
  • unclamped inductive switching (UIS) capability.
  • dv/dt ruggedness.
  • fast intrinsic reverse diode.
  • low gate charge.
  • thermistor for internal temperature measurement.
  • package.
  • low inductive current path.
  • screw connection to high current main terminals.
  • use of non interchangeable connectors for auxiliary terminals possible.
  • Kelvin source terminals for easy dri.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
VMM15-045 Dual Power MOSFET Modules
VMM1500-0075P Dual Power MOSFET Module
VMM300-03F Dual Power HiPerFET Module
VMM85-02F Dual Power HiPerFET Module
VMM90-09F Dual Power HiPerFET Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VMM 650-01F www.DataSheet4U.com Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 100 V ID25 = 680 A RDS(on) = 1.