• Part: VUB72
  • Description: Three Phase Rectifier Bridge
  • Manufacturer: IXYS
  • Size: 89.67 KB
Download VUB72 Datasheet PDF
IXYS
VUB72
VUB72 is Three Phase Rectifier Bridge manufactured by IXYS.
Features Maximum Ratings 1200 1600 40 110 530 100 V V A A A W 9 10 Input Rectifier D1 - D6 Symbol VRRM IFAV IDAVM IFSM Ptot Symbol Conditions VUB 72 -12 NO1 VUB 72 -16 NO1 TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C Conditions - three phase mains rectifier - brake chopper: - IGBT with low saturation voltage - Hi Per FREDTM free wheeling diode - module package: - high level of integration - solder terminals for PCB mounting - UL registered E72873 - isolated DCB ceramic base plate - large creepage and strike distances - high reliability Applications drives with - mains input - DC link - inverter or chopper feeding the machine - motor and generator/brake operation Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 1.0 0.9 0.4 1.1 0.02 V V m A m A VF IR Rth JC Rth JH IF = 25 A; VR = VRRM; TVJ = 25°C VR = 0.8 - VRRM; TVJ = 125°C per diode with heat transfer paste 1.2 K/W 1.42 K/W Chopper Diode D Symbol VRRM IF25 IF80 Symbol VF IR IRM trr Rth JC Rth JH Conditions TVJ = 25°C to 150°C DC; TC = 25°C DC; TC = 80°C Conditions IF = 25 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C Maximum Ratings 1200 25 15 V A A Characteristic Values min. typ. max. 2.7 2.0 0.1 16 130 3.1 0.1 V V m A m A A ns 2.3 K/W 3.12 K/W IF = 15A; di F/dt = -400 A/µs; TVJ = 125°C VR = 600 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 1-4 VUB 72 Chopper Transistor T Symbol VCES VGES IC25 IC80 ICM VCEK t SC (SCSOA) DC; TC = 25°C DC; TC = 80°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; L = 100 µH VGE = ±15 V; VCE = 900 V; TVJ = 125°C RG = 39 Ω; non repetitive Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 35 50 VCES 10 µs V V A A A Equivalent Circuits for Simulation Conduction D1 - D6 Diode (typ. at TJ = 125°C) V0 = 0.85 V; R0 = 7 mΩ T/D IGBT (typ. at VGE = 15 V; TJ = 125°C) V0...