Overview: IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S
TO-220 AB (IXKP) q D(TAB) MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C
single pulse repetitive ID = 6.6 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V
20 A 13 A 435 mJ 0.66 mJ 50 V/ns Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 10 V; ID = 10 A VDS = VGS; ID = 1.1 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 10 A VGS = 10 V; VDS = 400 V ID = 10 A; RG = 3.3 Ω 180
2.5 3
10
1520 72 32 8 11 10 5 50 5 200 mΩ
3.5 V
1 µA µA
100 nA
pF pF
45 nC nC nC
ns ns ns ns
0.
