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HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
IXFH 22N55
VDSS
ID (cont)
RDS(on) trr
= 550 V
= 22 A = 0.27 W £ 250 ns
Preliminary data
Symbol
VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
P D
TJ TJM Tstg TL M
d
Weight
Symbol
V DSS
VGS(th) I
GSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings
550 V 550 V ±20 V ±30 V
22 A 88 A 22 A 30 mJ
5 V/ns
300 W
-55 ... +150 150
-55 ... +150 300
°C °C °C °C
1.13/10 Nm/lb.in.
22N55 Datasheet
