22N55 Overview
+150 300 °C °C °C °C 1.13/10 Nm/lb.in. 6g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
22N55 Key Features
- International standard packages JEDEC TO-247 AD
- Low R HDMOSTM process DS (on)
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance (< 5 nH)
- easy to drive and to protect
- Fast intrinsic Rectifier