Datasheet Summary
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 30N50 IXFH/IXFT 32N50
V DSS
500 V 500 V
D25
30 A 32 A
R DS(on)
0.16 W 0.15 W trr £ 250 ns
Symbol
Test Conditions
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
VGS V
Continuous Transient
±30
ID25 TC = 25°C
IDM TC = 25°C pulse width limited by TJM
IAR TC = 25°C
30N50 32N50 30N50 32N50 30N50 32N50
EAS EAR dv/dt
TC = 25°C
ID = 25°C
£
I,
DM di/dt
£
A/ms,
V...
