Overview: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on)
0.16 W 0.15 W Preliminary data Symbol
VDSS VDGR VGS VGSM ID25
I
DM
I
AR
EAS EAR dv/dt
PD TJ TJM Tstg TL VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient 500 500
±20 ±30 TC = 25°C T C = 25°C, Pulse width limited by T JM T C = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 30N50 32N50 30N50 32N50 30N50 32N50 30 120
30
1.5 45
5 310
-55 ... +150 150
-55 ... +150 1.6 mm (0.062 in.
