30N50Q Description
HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W Preliminary data Symbol VDSS.
30N50Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Fast intrinsic Rectifier