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HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 30N50Q
(Electrically Isolated Back Surface) IXFR 32N50Q
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
500 V 29 A
500 V 30 A
trr £ 250 ns
RDS(on)
0.16 W 0.15 W
Preliminary data
Symbol
VDSS VDGR VGS VGSM ID25
I
DM
I
AR
EAS EAR dv/dt
PD TJ TJM Tstg TL VISOL Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
500 500
±20 ±30
TC = 25°C
T C
=
25°C,
Pulse
width
limited
by
T JM
T C
= 25°C
TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
30N50 32N50 30N50 32N50 30N50 32N50
30 120
30
1.5 45
5
310
-55 ... +150 150
-55 ... +150
1.6 mm (0.062 in.
30N50Q Datasheet
