Overview: Advance Technical Information High Current MegaMOSTMFET
N-Channel Enhancement Mode IXTK 90N15 V DSS
ID25
R DS(on) = = = 150 V
90 A 16 mΩ Symbol Test conditions VDSS VDGR
VGS VGSM
ID25 I
D(RMS)
IDM I
AR
E AR
EAS
dv/dt
PD
T J
TJM Tstg
TL
M d
Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings
150 V 150 V
±20 V ±30 V
90 A 75 A 360 A 90 A
45 mJ 1.5 J
5 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 390 -55 ... +150
150 -55 ... +150
300 0.7/6
10 W
°C °C °C °C
Nm/lb.in.
