90N15 Description
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
90N15 Key Features
- Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
- Internationalstandardpackage
- Fastswitchingtimes
90N15 is N-Channel MOSFET manufactured by IXYS.
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.