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Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 90N15
V DSS
ID25
R DS(on)
= = =
150 V
90 A 16 mΩ
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 I
D(RMS)
IDM I
AR
E AR
EAS
dv/dt
PD
T J
TJM Tstg
TL
M d
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
Maximum ratings
150 V 150 V
±20 V ±30 V
90 A 75 A 360 A 90 A
45 mJ 1.5 J
5 V/ns
TO-264 AA (IXTK)
G D S
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
390 -55 ... +150
150 -55 ... +150
300 0.
90N15 Datasheet
