CLA20EF1200PZ Datasheet | IXYS

Features / Advantages: - Thyristor for fast turn-on switching - Integrated free wheeling diode - Planar passivated chip - Long-term stability Applications: - Ignition for HD lamps - Capacity discharge Package: TO-263 (D2Pak-HV) - Industry standard outline - Ro HS pliant - Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b CLA20EF1200PZ advanced Thyristor Ratings Symbol VDSM VDRM ID VT I TAV Definition Conditions max. non-repetitive forward blocking voltage max. repetitive forward blocking voltage drain current forward voltage drop Note: reverse voltage drop ~1.2 x VT average forward current VD = 1200 V VD = 1200 V IT = 20 A I T = 40 A IT = 20 A I T = 40 A TC = 115°C DC TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125 °C TVJ = 150°C min. typ. max. Unit 1300 V 1200 V 10 µA 1 m A 1.40 V 1.60 V 1.40 V 1.60 V 20 A VT0 r T R th JC Rth CH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq threshold voltage slope resistance for power loss calculation only TVJ = 150°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50...