Download CPC3714CTR Datasheet PDF
CPC3714CTR page 2
Page 2
CPC3714CTR page 3
Page 3

CPC3714CTR Description

The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications.

CPC3714CTR Key Features

  • Offers Low RDS(on) at Cold Temperatures
  • RDS(on) 14 max. at 25ºC
  • High Input Impedance
  • High Breakdown Voltage: 350V
  • Low VGS(off) Voltage: -1.6 to -3.9V
  • Small Package Size: SOT-89