CPC3909ZTR Datasheet | IXYS

Features - 400V Drain-to-Source Voltage - Depletion Mode Device Offers Low RDS(on) at Cold Temperatures - Low On-Resistance: 4.5 (Typical) @ 25°C - Low VGS(off) Voltage - High Input Impedance - Low Input and Output Leakage - Small Package Size SOT-89 and SOT-223 - PC Card (PCMCIA) patible - PCB Space and Cost Savings - Flammability Rating UL 94 V-0 Applications - LED Drive Circuits - Telemunications - Normally On Switches - Ignition Modules - Converters - Security - Power Supplies - Regulators Circuit Symbol CPC3909 400V, 6N-Channel Depletion-Mode FET Description The CPC3909 is an N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3909Z) and an SOT-89 package (CPC3909C). Both utilize IXYS Integrated Circuits Division’s proprietary vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telemunications, security, and power supplies. CPC3909Z and the CPC3909C have a typical on-resistance of 4.5 and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. Ordering Information Part Number CPC3909CTR CPC3909ZTR Description SOT-89: Tape and Reel (1000/Reel) SOT-223: Tape and Reel (1000/Reel) Package Pinout: 4 123 Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC3909-R01...