DE150-201N09A Overview
DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C;.
DE150-201N09A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low RDS(on)
- Very low insertion inductance (<2nH)