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DE150-201N09A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol Test Conditions
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
200
V
200
V
VDSS
=
ID25
=
RDS(on) ≤
PDC
=
200 V 9A
0.3 Ω 75 W
VGS VGSM
Continuous Transient
±20
V
±30
V
ID25
Tc = 25°C
IDM
Tc = 25°C, pulse width limited by TJM
9
A
54
A
IAR
Tc = 25°C
9.0
A
EAR
Tc = 25°C
7.5 mJ
dv/dt
PDC PDHS
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Tc = 25°C Derate 4.4W/°C above 25°C
5 V/ns
>200 V/ns 75 W
GATE
50 W
DRAIN
PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Tc = 25°C
3.
DE150-201N09A Datasheet
