Overview: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 V 200 V VDSS = ID25 = RDS(on) ≤ PDC = 200 V 9A
0.3 Ω 75 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9 A 54 A IAR Tc = 25°C 9.0 A EAR Tc = 25°C 7.5 mJ dv/dt
PDC PDHS IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Tc = 25°C Derate 4.4W/°C above 25°C 5 V/ns
>200 V/ns 75 W
GATE
50 W DRAIN PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on) Tc = 25°C 3.5 W 2 C/W 3 C/W Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified min. typ. max. VGS = 0 V, ID = 3 ma 200 V VDS = VGS, ID = 250 µa 2 3.5 4.5 V VGS = ±20 VDC, VDS = 0 ±100 nA VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 25 µA 250 µA VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.
