IXYS DESC29-06AC
HiPerFRED Epitaxial Diode
MAXIMUM RATINGS
35 15 110 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W V~ N / lb gAPPLICATIONS
l l l l l l l lFEATURES
l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 95 2500 11...65 / 2.4...11 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 l Symbol IR Q Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.49 2.04 1.6 0.6 µA mA V V K/W K/W ns 4.9 A l l l VF R RthJC RthCH trr IRM l l l Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplie...