DGSK32-018CS Datasheet PDF

FEATURES

Conditions

MAXIMUM RATINGS

180 TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Conditions IF = 7.5 A; IF = 7.5 A; VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 24 15 80 34 V A A A W Characteristic Values min. typ. max. 1.25 1.0 0.25 1.1 23 21 1.5 V V 0.25 mA mA A ns pF 4.4 K/W GaAs Schottky Diode with Enhanced Barrier Height:
● lowest operating forward voltage drop due to additional injection of minority carriers
● high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages:
● Incorporating Single and Dual Diode Topologies
● Industry Standard Package Outlines
● Epoxy meets UL 94V-0

APPLICATIONS

IF = 5 A; -diF/dt = 150 A/µs; VR = 100 V; TVJ = 125°C VR = 100 V; TVJ = 125°C Component Symbol TVJ Tstg Symbol Weight Conditions TO-252 TO-263 Conditions

MAXIMUM RATINGS

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