DGSK36-03CS Datasheet PDF

MAXIMUM RATINGS

300 V 29 A 17.5 A 80 A 34 W Symbol Conditions Characteristic Values min. typ. max. VF IF = 7.5 A; TVJ = 25°C IF = 7.5 A; TVJ = 125°C IR VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 125°C 1.5 1.9 V 1.1 V 0.25 mA 0.25 mA IRM IF = 5 A; -diF/dt = 150 A/µs; trr VR = 150 V; TVJ = 125°C CJ VR = 150 V; TVJ = 125°C RthJC Data according to IEC 60747 and per diode unless otherwise specified 1.4 23 10.7 A ns pF 4.4 K/W Component Symbol Conditions TVJ Tstg

MAXIMUM RATINGS

-55...+175 °C -55...+150 °C

FEATURES

GaAs Schottky Diode with Enhanced Barrier Height:
● lowest operating forward voltage drop due to additional injection of minority carriers
● high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages:
● Incorporating Single and Dual Diode Topologies
● Industry Standard Package Outlines
● Epoxy meets UL 94V-0

APPLICATIONS

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