IXYS DGSS10-06CC
Gallium Arsenide Schottky Rectifier
FEATURES
MAXIMUM RATINGS
600 300 25 15 80 29 V V A A A W TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Symbol VF IR IRM t rr CJ Conditions IF = 10 A; IF = 10 A; VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Characteristic Values min. typ. max. 1.7 1.2 25 1.4 23 10.7 2.1 V V 0.25 mA µA A ns pF 5.2 K/W GaAs Schottky Diode with Enhanced Barrier Height:● lowest operating forward voltage drop due to additional injection of minority carriers
● high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off
● low leakage current ISOPLUS220TM Package:
● isolated back surface
● low coupling capacy between pins and heatsink
● enlarged creepage
● high reliability
● industry standard outline
APPLICATIONS
ww w.D ata Sh eet 4U .co m IF = 5 A; -diF/dt = 150 A/µs; VR = 150 V; TVJ = 125°C VR = 150 V; TVJ = 125°C RthJC Data a...