DHG10I1200PM
Features
/ Advantages:
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the mutating switch
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Backside: isolated
Package:
TO-220FPAC
- Industry standard outline
- Plastic overmolded tab for electrical isolation
- Epoxy meets UL 94V-0
- Ro HS pliant
Symbol VRRM IR
I FAV VF0 r F R th JC TVJ Ptot I FSM I RM t rr
CJ EAS IAR
Definition
Conditions max. repetitive reverse voltage reverse current forward voltage
VR = 1200 V VR = 1200 V IF = 10 A IF = 20 A
TVJ = 25 °C
TVJ = 25 °C TVJ = 125 °C TVJ =...
