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DSEA59-06BC - Epitaxial Diode

Key Features

  • Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet DSEA VRSM V 600 VRRM V 600 Type DSEA 59-06BC DSEC 59-06BC 1 DSEC 2 3 Symbol IFRMSc IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Symbol IR d VF e RthJC RthCH trr IRM Conditions Lead current limit TC = 105°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typical; f = 10 kHz; repetitive 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 123 Maximum Ratings 45 30 200 0.2 A A A mJ 0.1 A -40...+175 175 -40...+150 °C °C °C 260 °C 136 W 2500 V~ 11...65 / 2.5...15 N / lb 2g Conditions Characteristic Values typ. max.