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DSEC120-12AK - Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • Epoxy meets UL 94V-0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEC 120-12AK HiPerFREDTM Epitaxial Diode with soft recovery Preliminary data IFAV = 2x60 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEC 120-12AK A C A TO-264 A TAB A CA A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 14.5 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive TC = 25°C mounting torque M3/M3.5 typical Maximum Ratings 70 A 60 A 500 A 23 mJ 1.5 -55...+175 175 -55...+150 230 0.8...1.