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DSEC60-04A - Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • Epoxy meets UL 94V-0 tbd A -55+175 °C 175 °C w -55+150 °C 165 W ne0.81.2 Nm.

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📁 Similar Datasheet

Part Number Description Manufacturer
DSEC60-02A HiPerFRED Epitaxial Diode IXYS Corporation
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DSEC60-03A HiPer FREDTM Epitaxial Diode with common cathode and soft recovery IXYS Corporation
DSEC60-03AQ HiPerFRED Epitaxial Diode IXYS Corporation
DSEC60-03AR Epitaxial Diode IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEC120-12AK Epitaxial Diode
DSEC16-06A High Performance Fast Recovery Diode
DSEC16-06AC High Performance Fast Recovery Diode
DSEC16-12A High Performance Fast Recovery Diode
DSEC16-12AS High Performance Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEC 60-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data IFAV = 2x30 A VRRM = 400 V trr = 30 ns VRSM V 400 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Symbol IR ① VF ② RthJC RthCH trr IRM VRRM V Type A C A TO-247 AD 400 DSEC 60-04A A C C (TAB) A D4 A = Anode, C = Cathode, TAB = Cathode Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = tbd A; L = tbd µH VA = 1.5·VR typ.