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DSEI12-06AS - Fast Recovery Epitaxial Diode

Features

  • / Advantages:.
  • Planar passivated chips.
  • Low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Very low Irm-values.
  • Very soft recovery behaviour.
  • Avalanche voltage rated for reliable operation.
  • Soft reverse recovery for low EMI/RFI.
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Datasheet preview – DSEI12-06AS

Datasheet Details

Part number DSEI12-06AS
Manufacturer IXYS
File Size 130.60 KB
Description Fast Recovery Epitaxial Diode
Datasheet download datasheet DSEI12-06AS Datasheet
Additional preview pages of the DSEI12-06AS datasheet.

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Full PDF Text Transcription

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FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-06AS Marking on Product: DSEI12-06AS 3 2/4 1 = not connected DSEI12-06AS VRRM = I FAV = t rr = 600 V 14 A 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) P
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