DSEI12-12AZ Datasheet | IXYS

Features / Advantages: - Planar passivated chips - Low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the mutating switch Applications: - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) Package: TO-263 (D2Pak-HV) - Industry standard outline - Ro HS pliant - Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 1200 V VR = 960 V IF = 12 A IF = 24 A IF = 12 A IF = 24 A TC = 100°C rectangular d = 0.5 VF0 r F R th JC R th CH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz reverse recovery time IF = 11 A; VR = 540 V -di F/dt = 100 A/µs TVJ = 25°C TVJ =...