Datasheet4U Logo Datasheet4U.com

DSEI2x101-12P - Fast Recovery Epitaxial Diode

Key Features

  • 2 independent FRED in 1 package.
  • Isolation voltage 3000 V~.
  • Planar passivated chips.
  • Leads suitable for PC board soldering.
  • Very short recovery time.
  • Soft recovery behaviour.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DSEI2X101-06A Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2X101 Fast Recovery Epitaxial Diode (FRED) IXYS Corporation
DSEI2x121-02A Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2x121-02P Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2X30 Fast Recovery Epitaxial Diode IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEI2x101-12A Fast Recovery Epitaxial Diode
DSEI2x101-06P Fast Recovery Epitaxial Diode
DSEI2x121 Fast Recovery Epitaxial Diode
DSEI2x161-02P Fast Recovery Epitaxial Diode
DSEI2x161-06P Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Fast Recovery Epitaxial Diode (FRED) DSEI 2x101 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 2x 101-12P AC-1 IK-10 LN-9 VX-18 Symbol IFRMS IFAVM IFRM ① IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings (per diode) TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 130 91 tbd TVJ = 45°C; t = 10 ms (50 Hz), sine 900 -40...+150 150 -40...+150 A A A A °C °C °C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M4) 250 2500 3000 1.5 - 2.0 14 - 18 W V~ V~ Nm lb.in. 24 g Symbol Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM dS dA a TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.