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DSEI2x31-12P - Fast Recovery Epitaxial Diode

Key Features

  • 2 independent FRED in 1 package.
  • Isolation voltage 3000 V~.
  • Planar passivated chips.
  • Leads suitable for PC board soldering.
  • Very short recovery time.
  • Soft recovery behaviour.

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📁 Similar Datasheet

Part Number Description Manufacturer
DSEI2x31-06P Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2X31 Fast Recovery Epitaxial Diode (FRED) IXYS Corporation
DSEI2X30 Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2x30-06P Fast Recovery Epitaxial Diode IXYS Corporation
DSEI2x30-12B Fast Recovery Epitaxial Diode IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEI2x31-12B Fast Recovery Epitaxial Diode
DSEI2x31-10B Fast Recovery Epitaxial Diode
DSEI2x31-04C Fast Recovery Epitaxial Diode
DSEI2x31-06C Fast Recovery Epitaxial Diode
DSEI2x30-04C Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEI 2x31-12P Fast Recovery Epitaxial Diode (FRED) IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 2x 31-12P Symbol IFRMS IFAVM IFRM ① IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings (per diode) TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 70 28 375 TVJ = 45°C; t = 10 ms (50 Hz), sine 200 -40...+150 150 -40...+150 A A A A °C °C °C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M4) 100 2500 3000 1.5 - 2.0 14 - 18 W V~ V~ Nm lb.in. 18 g Symbol Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM dS dA a TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.