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DSEI30-12A - Fast Recovery Epitaxial Diode

Key Features

  • / Advantages:.
  • Planar passivated chips.
  • Low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Very low Irm-values.
  • Very soft recovery behaviour.
  • Avalanche voltage rated for reliable operation.
  • Soft reverse recovery for low EMI/RFI.
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI30-12A 3 1 DSEI30-12A VRRM = 1200 V I FAV = 30 A t rr = 50 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: TO-247 ● Industry standard outline ● RoHS com