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DSEP30-03A - Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • Epoxy meets UL 94V-0.

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Full PDF Text Transcription for DSEP30-03A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DSEP30-03A. For precise diagrams, and layout, please refer to the original PDF.

DSEP 30-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 30-03A C A C (TAB) A = Anode...

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VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 30-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -55...+175 175 -55...

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