IXYS DSEP8-06B
Epitaxial Diode
| Part No. | DSEP8-06B |
|---|---|
| Datasheet | DSEP8-06B Download |
| Manufacturer |  IXYS |
| Description | Epitaxial Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
35 A 10 A 50 A 0.1 mJ 0.1 A -55...+175 °C 175 °C -55...+150 °C 60 W 0.4...0.6 Nm 2 g Symbol IR ① VF ② RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C Characteristic Values typ. max. 60 µA 0.25 mA 1.66 V 2.66 V 2.5 K/W 0.5 K/W 30 ns 2.4 A Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified:FEATURES
● International standard package● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low IRM-values
● Soft recovery behaviour
● Epoxy meets UL 94V-0
APPLICATIONS
● Antiparallel diode for high frequency switching devices● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters and motor control circuits
● Rectifiers in switch mode power supplies (SMPS)...
