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DSI30-08AC - Rectifier Diode

Key Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(15pF typical) International standard package Epoxy meets UL 94V-0 ISOPLUS220 Outline (2 leads) -55+150 150 -55+150 °C °C °C 260 °C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting Force typical 2500 1165 / 2.411 2 V~ N / ib g Symbol IR VF rVTTO RthJC RthCH Conditions TVJ = 25°C; VR = VRRM TVJ = TVJM; VR = VRRM IF = 45 A; TVJ = 25°C For power los.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSI30-08A Standard Rectifier
DSI30-08AS Standard Rectifier
DSI30-12A Standard Rectifier
DSI30-12AC Rectifier Diode
DSI30-12AS Standard Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSI 30 Rectifier Diode ISOPLUS220TM Electrically Isolated Back Surface VRRM = 800 - 1200 V IF(AV)M = 30 A VRSM V 900 1300 VRRM V 800 1200 Type DSI 30-08AC DSI 30-12AC ISOPLUS 220TM AC Preliminary Data Sheet C A Isolated back surface* Symbol IFRMS IFAV IFSM I2t TVJ TVJM Tstg TL VISOL FC Weight Conditions TC = 95°C; 180O sine (RMS current limited) TVJ = 45°C; t = 10 ms (50 Hz), sine VR = 0 V; t = 8.3 ms (60 Hz), sine TVVRJ = 150°C; t = 10 ms = 0 V; t = 8.3 ms (50 Hz), sine (60 Hz), sine TVVRJ = 45°C; = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVVRJ = 150°C; t = 10 ms = 0 V; t = 8.3 ms (50 Hz), sine (60 Hz), sine 1.6 mm (0.062 in.