DSP25-12AT Datasheet | IXYS

Features / Advantages: - Planar passivated chips - Very low leakage current - Very low forward voltage drop - Improved thermal behaviour Applications: - Diode for main rectification - For single and three phase bridge configurations Package: TO-268AA (D3Pak) - Industry standard outline - Ro HS pliant - Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 1200 V VR = 1200 V forward voltage drop IF = 25 A IF = 50 A IF = 25 A IF = 50 A average forward current TC = 135°C 180° sine VF0 r F R th JC R th CH Ptot I FSM I²t CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V; f = 1 MHz TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150 °C TVJ = 175 °C Ratings min. typ. max. Unit 1300 V 1200 V 40 µA 1,5 m A 1,23 V 1,47 V 1,16 V 1,50 V 25 A TVJ = 175...