IXYS FDM21-05QC
Power MOSFET
MAXIMUM RATINGS
500 V ±20 V 21 A 15 A Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 VDS = 20 V; ID = 0.25 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 0.5● VDSS; ID = 14 A 220 mΩ 2.5 4.5 V 250 µA 250 µA 200 nA 95 nC 20 nC 42 nC VGS= 10 V; VDS = 0.5
● VDSS ID = 14 A; RG = 2 Ω 20 ns 20 ns 50 ns 15 ns with heat transfer paste 0.5 K/W 0.93 K/W
FEATURES
● Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness● HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation
● ISOPLUS i4-PACTM package - isolated back surface - UL registered E72873 - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard out...