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FII40-06D - IGBT phaseleg

Key Features

  • NPT IGBT technology - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching.
  • HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT phaseleg in ISOPLUS i4-PAC™ FII 40-06D IC25 = 40 A VCES = 600 V VCE(sat) typ. = 1.8 V 3 5 4 1 E72873 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 33 Ω TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 600 V ± 20 V 40 25 60 VCES 10 A A A µs 125 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 25 A; VGE = 15 V IC = 0.