Datasheet4U Logo Datasheet4U.com

FMM300-0055P - Trench Power MOSFET

Key Features

  • trench MOSFET - very low on state resistance RDSon - fast switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMM362HE 4Gb/s GaAs Standard Logic IC Fujitsu Media Devices
FMM362HG 4Gb/s GaAs Standard Logic IC Fujitsu Media Devices
FMM363HE 4Gb/s GaAs Standard Logic IC Fujitsu Media Devices
FMM363HG 4Gb/s GaAs Standard Logic IC Fujitsu Media Devices
FMM-22R Silicon Diode Sanken

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
FMM50-025TF Power MOSFET
FMM60-02TF N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FMM 300-0055P Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 300 A VDSS = 55 V RDSon typ. = 2.7 mΩ Preliminary data 3 T1 5 4 T2 1 2 1 5 MOSFET T1/T2 Symbol t VDSS VGS u ID25 ID90 IF25 -o IF90 Conditions TVJ = 25°C to TVJmax TC = 25°C TC = 90°C (body diode) TC = 25°C (body diode) TC = 90°C Maximum Ratings 55 V ±20 V 300 A 220 A 240 A 150 A e Symbol s R DSon VGSth a IDSS h IGSS Qg P Q gs Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. V GS = 10 V; ID = 150 A V DS = 20 V; ID = 2 mA VDS = 55 V; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 44 V; ID = 50 A 2.7 3.6 mΩ 2 4V 2 µA 0.