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FMM50-025TF - Power MOSFET

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low Gate Drive RRequirement z High power density z Fast Intrinsic Rectifier z Low Drain to Ground Capacitance z Fast Switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information Trench Gate HiperFET Power MOSFET Phase Leg Topology N-Channel FMM50-025TF 33 T1 55 44 T2 11 22 VDSS = ID25 = ≤ RDS(on) = trr(typ) 250V 30A 60mΩ 84ns ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions 50/60HZ, RMS, t = 1min, Leads-to-Tab 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 300 °C 260 °C 20..120/ 4.5..27 N/lb.