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FMM60-02TF - N-Channel Power MOSFET

Key Features

  • z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low gate drive requirement z High power density z Fast intrinsic rectifier z Low drain to ground capacitance z Fast switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET Phase Leg Topology FMM60-02TF 33 T1 55 44 T2 11 22 VDSS = ID25 = ≤ RDS(on) = trr(typ) 200V 33A 40mΩ 82ns ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions 50/60HZ, RMS, t = 1min, leads-to-tab 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Symbol VDSS VDGR VGSM ID25 IDM IA EAS dV/dt PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Symbol CP dS ,dA dS ,dA Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal Maximum Ratings -55 ...