IXYS FMM75-01F
Power MOSFET
MAXIMUM RATINGS
TVJ = 25°C to 150°C 100 V ±20 V TC = 25°C TC = 90°C 75 A 50 A (body diode) TC = 25°C (body diode) TC = 90°C 100 A 60 A VDS < VDSS; IF ≤ 300A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω TVJ = 150°C 5 V/ns TC = 25°C 30 mJ Symbol R DSon VGSth IDSS I GSS Q g Qgs Q gd td(on) tr t d(off) tf VF trr R thJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. V GS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C V = ±20 V; V = 0 V GS DS VGS= 10 V; VDS = 0.5● VDSS; ID = ID90 18 25 mΩ 2 4V 0.25 0.3 mA mA 200 nA 180 nC 35 nC 85 nC VGS= 10 V; VDS = 0.5
● VDSS ID = ID90; RG = 2 Ω 20 ns 60 ns 80 ns 60 ns (body diode) IF = 75 A; VGS = 0 V (body diode) IF = 37.5A; -di/dt = 100A/µs; VDS = 25V with heat transfer paste 1.2 300 0.93 1.5 V ns 0.5 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved
FEATURES
● HiPerFETTM technology - low RDSon - low gate charge for high...