Datasheet4U Logo Datasheet4U.com

FMP26-02P - P & N-Channel Power MOSFET

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Low Gate Drive Requirement z High Power Density z Low Drain to Ground Capacitance z Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMP20N05 N-Channel MOSFET Fairchild Semiconductor
FMP20N50E N-CHANNEL SILICON POWER MOSFET Fuji Electric
FMP20N50ES N-CHANNEL SILICON POWER MOSFET Fuji Electric
FMP20N60S1 N-CHANNEL SILICON POWER MOSFET Fuji Electric
FMP20N60S1 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology (Electrically Isolated Tab) FMP26-02P 43 T1 5 34 T2 11 22 VDSS ID25 RDS(on) trr(typ) P CH. - 200V - 17A 170mΩ 240ns N CH. 200V 26A 60mΩ 150ns Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 ... +150 °C 150 °C -55 ... +150 °C 50/60HZ, RMS, t = 1min, Leads-to-Tab 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 2500 ~V 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. Symbol CP dS, dA dS, dA Weight Test Conditions Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case Pin - Pin Pin - Backside Metal Characteristic Values Min. Typ. Max. 40 pF 1.7 mm 5.